kw.\*:("Unión graduada")
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Estimation of trap concentration in linearly graded junctions using DLTSKOTESWARA RAO, K. S. R; KUMAR, V.Physica status solidi. A. Applied research. 1990, Vol 117, Num 1, pp 251-257, issn 0031-8965Article
The photonic analogue of the graded heterostructure: Analysis using the envelope approximationISTRATE, Emanuel; SARGENT, Edward H.Optical and quantum electronics. 2002, Vol 34, Num 1-3, pp 217-226, issn 0306-8919Conference Paper
Isotype heterojunctions with flat valence or conduction bandBABIC, D. I; DÖHLER, G. H; BOWERS, J. E et al.IEEE journal of quantum electronics. 1997, Vol 33, Num 12, pp 2195-2198, issn 0018-9197Article
Deposition of graded alloy nitride films by closed field unbalanced magnetron sputteringMONAGHAN, D. P; TEER, D. G; LAING, K. C et al.Surface & coatings technology. 1993, Vol 59, Num 1-3, pp 21-25, issn 0257-8972Conference Paper
Electron dynamics in graded nanostructuresKOHN, W.Physica. B, Condensed matter. 1995, Vol 212, Num 3, pp 305-308, issn 0921-4526Conference Paper
New double graded structure for enhanced performance in white organic light emitting diodePENG YUCHEN; HERNG YIH UENG; YOKOYAMA, Meiso et al.Journal of luminescence. 2010, Vol 130, Num 10, pp 1764-1767, issn 0022-2313, 4 p.Article
Stress characterization of device layers and the underlying Si1-xGex virtual substrate with high-resolution micro-Raman spectroscopyCHEN, W. M; MCNALLY, P. J; DILLIWAY, G. D. M et al.Journal of materials science. Materials in electronics. 2003, Vol 14, Num 5-7, pp 455-458, issn 0957-4522, 4 p.Conference Paper
Axially linear slopes of composition for delta crystalsGILLE, P; HOLLATZ, M; KLEESSEN, H et al.Journal of crystal growth. 1994, Vol 139, Num 1-2, pp 165-171, issn 0022-0248Article
Analysis of a reverse-biased linearly graded junction with high concentration of deep impuritiesLOPEZ-VILLANUEVA, J. A; JIMENEZ-TEJADA, J. A; CARTUJO, P et al.Solid-state electronics. 1990, Vol 33, Num 7, pp 805-811, issn 0038-1101, 7 p.Article
Transverse averaging technique for the depletion capacitance of nonuniform PN-junctionsBARYBIN, Anatoly A; SANTOS, Edval J. P.Semiconductor science and technology. 2007, Vol 22, Num 4, pp 312-319, issn 0268-1242, 8 p.Article
The limiting efficiency of band gap graded solar cellsRAFAT, N. H; HABIB, S. E.-D.Solar energy materials and solar cells. 1998, Vol 55, Num 4, pp 341-361, issn 0927-0248Article
Graded-channel MOSFET (GCMOSFET) for high performance, low voltage DSP applicationsMA, J; LIANG, H.-B; PRYOR, R. A et al.IEEE transactions on very large scale integration (VLSI) systems. 1997, Vol 5, Num 4, pp 352-359, issn 1063-8210Conference Paper
On equispaced levels Hamiltonians with the variable effective mass following the potentialMILANOVIC, V; IKONIC, Z; TJAPKIN, D et al.International conference on microelectronic. 1997, pp 157-160, isbn 0-7803-3664-X, 2VolConference Paper
A dislocation in a compositionally graded epilayerTONG-YI ZHANG.Physica status solidi. A. Applied research. 1995, Vol 148, Num 1, pp 175-189, issn 0031-8965Article
Comparison of different Si/Ge alloy buffer concepts for (SimGen)p superlatticesDETTMER, K; BEHNER, U; BESERMAN, R et al.Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 142-146, issn 0022-0248Conference Paper
Transmission coefficient of electrons through a single graded barrierRENAN, R; FREIRE, V. N; AUTO, M. M et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 11, pp 8446-8449, issn 0163-1829Article
Saturation current and excess carrier distribution in exponentially graded p-n junctionsSCHACHAM, S. E; FINKMAN, E.Journal of applied physics. 1992, Vol 71, Num 10, pp 5033-5040, issn 0021-8979Article
Offset voltage and space-charge layer capacitance of a linearly graded p-n junction and an abrupt p-n junctionFAT DUEN HO.International journal of electronics. 1990, Vol 69, Num 2, pp 247-266, issn 0020-7217Article
Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1-x strained quantum wellsMAIA, F. F; FREIRE, J. A. K; FARIAS, G. A et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 247-251, issn 0169-4332Conference Paper
Influence of misfit and threading dislocations on the surface morphology of SiGe graded-layersGALLAS, B; HARTMANN, J. M; BERBEZIER, I et al.Journal of crystal growth. 1999, Vol 201202, pp 547-550, issn 0022-0248Conference Paper
Influence of the surface morphology on the relaxation of low-strained InxGa1-xAs linear buffer structuresVALTUENA, J. F; SACEDON, A; MOLINA, S. I et al.Journal of crystal growth. 1997, Vol 182, Num 3-4, pp 281-291, issn 0022-0248Article
Recombination emission for nonuniformly heated graded semiconductor structuresSAVITSKII, V. G; SOKOLOVSKII, B. S.Inorganic materials. 1996, Vol 32, Num 8, pp 850-853, issn 0020-1685Article
Capacitance of abrupt heterojunctions with inversion layersSCHMEITS, M; SAKHAF, M.Solid-state electronics. 1995, Vol 38, Num 5, pp 1001-1007, issn 0038-1101Article
Strain relaxation and misfit dislocations in compositionally graded Si1-xGex layers on Si(001)LI, J. H; HOLY, V; BAUER, G et al.Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 137-141, issn 0022-0248Conference Paper
On the thermionic-diffusion theory of minority transport in heterostructure bipolar transistorsGRINBERG, A. A; LURYI, S.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 5, pp 859-866, issn 0018-9383Article
